Not moving in the direction of downsizing, TSMC finds an opportunity to replace the semiconductor material itself, which is silicon.
The Taiwan Semiconductor Manufacturing Company (TSMC), National Taiwan University (NTU), and the Massachusetts Institute of Technology (MIT) in the United States have made inroads into the world.
The joint announcement eclipses IBM’s announcement earlier this month on the development of a 2nm chip, which it says is “the smallest and most powerful in the world.” Although the most advanced chips are currently 5nm, TSMC’s breakthrough has the potential to lead to more power savings and higher speeds for the technology.
“While today’s most advanced technologies can produce chips as small as 3nm, this latest breakthrough has the potential to ‘break the limits of technology’ 23, he explains in the advisory.
The discovery was first made by the MIT team, with elements optimized by TSMC and enhanced by the Department of Electrical Engineering.
The important factor of the research results is the use of semi-metallic bismuth as the electrode of the two-dimensional material to replace silicon, which may have low cut resistance and bad patch resistance, the volume will increase to the most level. high possible for semiconductors.
For decades chipmakers have tried cramming more transistors onto smaller and smaller areas, but now more transistors onto smaller and smaller areas, but now the water heater is the fastest and the main fuel for semiconductors. Therefore, scientists looked for 2D materials to replace silicon in order to push the chip to 1nm and below.